Since 2018, he has served as the Director of Research and Development at ML System S.A. Prior to this, from 2017, he held the position of Deputy Director for Research and Technology Transfer, and since July 1, 2015, he has been employed as a Nanotechnology Specialist at ML System. Since 2016, he has also been a faculty member, and since 2018, an Assistant Professor at the Institute of Environmental Engineering at the Catholic University of Lublin. From 2011 to 2015, he was a Research Scientist at the National Center for Scientific Research (CNRS). He obtained his PhD in Physical Sciences in 2014 from the University of Montpellier (France), with his dissertation focused on the non-destructive evaluation of doping in SiC ("Evaluation of doping in 4H-SiC by optical spectroscopies").
Between 2011 and 2014, he was a Research Scientist at CNRS, working at Université Montpellier 2 in the Charles Coulomb Laboratory, within the Semiconductor Materials and Sensors group. He is a specialist in optical spectroscopy (LTPL, Raman, IR, ellipsometry), structural measurements (SIMS, SEM, TEM), and electrical measurements (Hall effect, C-V, DC). He has extensive experience in characterizing the optical, transport, and electrical properties of semiconductors, with a particular focus on wide-bandgap semiconductors and low-dimensional materials, including quantum dots.
He was a member of the international NETFiSiC program (2011-2014) dedicated to the production, research, and application of SiC. He has participated in numerous international conferences and workshops focused on SiC and semiconductor characterization methodology, including ICSCRM 2013 (The International Conference on Silicon Carbide and Related Materials, Miyazaki, Japan), HeteroSiC-WSMPE 2013 (Nice, France), and ECSCRM 2012 (St. Petersburg, Russia). As part of the NETFiSiC project, he completed several international research internships aimed at gaining knowledge in the production, characterization, and application of semiconductor thin films, including at NOVQSIC SA (growth and polishing of semiconductor thin films via CVD), Vilnius University (measurement of optical properties of thin films using DT and LITG methods), and the University of Thessaloniki ("Summer School: Micro- and Nano-structural Characterization of Materials").
Currently, he is focused on material growth processes using physical and chemical techniques dedicated to energy conversion processes. In his work on the implementation of third-generation printed cells, he supervised and conducted research utilizing screen printing, spray deposition, rollblade, and n-fog techniques. He has been both the leader and a participant in numerous international and national projects dedicated to the implementation of innovative energy conversion and storage technologies ​

Celfos: Simulation-Assisted AI Modeling for Glass Quality Prediction

Atomic Layer Deposition (ALD), a gas-phase thin-film deposition technique based on self-limiting surface reactions, offers unparalleled control over film thickness and conformality, rendering it highly advantageous for photovoltaic (PV) device fabrication. ALD enables the deposition of ultrathin, pinhole-free passivation layers, such as Al₂O₃ and SiO₂, on semiconductor absorber surfaces, effectively suppressing surface recombination velocities and consequently enhancing minority carrier lifetimes. Furthermore, ALD plays a critical role in the synthesis of transparent conductive oxides (TCOs) with optimized electrical and optical properties, as well as the engineering of functional interlayers and buffer layers at critical interfaces to minimize interfacial defects and optimize charge carrier transport. ALD plays a crucial role in the advancement of quantum dot solar cell (QDSC) technology by addressing several key challenges associated with these devices such as improving stability by passivation, improving carrier transport for both electron and hole, enhancing the interfaces in order to optimize energy level alignment. By enabling the deposition of conformal coatings on complex nanostructured substrates and facilitating precise compositional control within multi-layered structures ALD is leading technology in QDSC manufacture process. Despite its significant advantages, the application of Atomic Layer Deposition (ALD) in the production of quantum dot solar cells (QDSCs) also presents several disadvantages and challenges such as: relatively slow deposition rate and cost, precursor availability and handling, material constraints and one of the biggest challenge scalability. Still scaling up the process to deposit uniform films over large areas remains a significant challenge. Maintaining uniform precursor distribution and reaction rates across large substrates in ALD reactors is difficult. In this work we present the scaling up process of ALD layer deposited on glass surface of 1000 x 2000 mm. The key parameters such as process temperature and homogeneity as well as pulse time of selected precursor and puree time were optimized in order to obtained conformal layer. ​